IPD16CNE8N G
Manufacturer Part Number | IPD16CNE8N G |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CH 85V 53A TO252-3 |
Package | PG-TO252-3 |
In Stock | 5777 pcs |
Data sheet | IPx16CNE8N GPart Number GuideMultiple Devices 11/Dec/2009 |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 61µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO252-3 |
Series | OptiMOS™ |
Rds On (Max) @ Id, Vgs | 16mOhm @ 53A, 10V |
Power Dissipation (Max) | 100W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 3230 pF @ 40 V |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 85 V |
Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
Base Product Number | IPD16C |
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